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d a t a sh eet preliminary speci?cation supersedes data of 1999 jun 14 file under integrated circuits, ic01 1999 dec 14 integrated circuits tda8510J 26 w btl and 2 13 w se power amplifiers free datasheet http:///
1999 dec 14 2 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J features requires very few external components high output power low output offset voltage (btl channel) fixed gain diagnostic facility (distortion, short-circuit and temperature detection) good ripple rejection mode select switch (operating, mute and standby) ac and dc short-circuit safe to ground and to v p low power dissipation in any short-circuit condition thermally protected reverse polarity safe electrostatic discharge protection no switch-on/switch-off plop flexible leads low thermal resistance identical inputs (inverting and non-inverting). general description the tda8510J is an integrated class-b output amplifier in a 17-lead single-in-line (sil) power package. it contains a 26 w bridge-tied load (btl) amplifier and 2 13 w single-ended (se) amplifiers. the device is primarily developed for multi-media applications and active speaker systems (stereo with subwoofer). quick reference data ordering information symbol parameter conditions min. typ. max. unit general v p supply voltage 6 15 18 v i orm repetitive peak output current -- 4a i q(tot) total quiescent current - 80 - ma i stb standby current - 0.1 100 m a btl channel p o output power r l =4 w ; thd = 10% - 26 - w svrr supply voltage ripple rejection 46 -- db v n(o) noise output voltage r s =0 w- 70 -m v ? z i ? input impedance 25 -- k w ?d v oo ? dc output offset voltage -- 150 mv single-ended channels p o output power thd = 10% r l =4 w- 7 - w r l =2 w- 13 - w svrr supply voltage ripple rejection 46 -- db v n(o) noise output voltage r s =0 w- 50 -m v ? z i ? input impedance 50 -- k w type number package name description version tda8510J dbs17p plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1 free datasheet http:///
1999 dec 14 3 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J block diagram fig.1 block diagram. mode select switch mgl428 output 1 x1 va standby switch v p v p1 v p2 mute switch standby reference voltage 5 13 mute switch va power stage mute switch va power stage 6 8 14 mute switch va power stage 18 k w 18 k w 15 k w 15 k w mute switch va c m 18 k w 18 k w c m c m c m power stage 10 12 2711 ground (signal) gnd1 gnd2 power ground (substrate) output 3 output 4 output 2 non-inverting input 1 inverting input 3 non-inverting input 4 17 1 tda8510J mute reference voltage input reference voltage non-inverting input 2 3 protections thermal short-circuit diagnostic output 16 4 supply voltage ripple rejection 15 60 k w 2 k w 60 k w 2 k w 60 k w 2 k w 60 k w 2 k w 9 not connected free datasheet http:///
1999 dec 14 4 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J pinning symbol pin description - inv1 1 non-inverting input 1 sgnd 2 signal ground - inv2 3 non-inverting input 2 rr 4 supply voltage ripple rejection v p1 5 supply voltage 1 out1 6 output 1 gnd1 7 power ground 1 out2 8 output 2 n.c. 9 not connected out3 10 output 3 gnd2 11 power ground 2 out4 12 output 4 v p2 13 supply voltage 2 mode 14 mode select switch input inv3 15 inverting input 3 v diag 16 diagnostic output - inv4 17 non-inverting input 4 fig.2 pin configuration. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 tda8510J - inv1 sgnd - inv2 - inv4 rr out1 gnd1 out2 n.c. out3 gnd2 out4 mode inv3 v p1 v p2 mgl427 v diag free datasheet http:///
1999 dec 14 5 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J functional description the tda8510J contains four identical amplifiers and can be used for two single-ended (se) channels (fixed gain 20 db) and one bridge-tied load (btl) channel (fixed gain 26 db). special features of the device are: mode select switch (pin 14) low standby current (<100 m a) low switching current (low cost supply switch) mute facility. to avoid switch-on plops, it is advised to keep the amplifier in the mute mode during 3 100 ms (charging of the input capacitors at pins 1, 3, 15 and 17). this can be achieved by: microcontroller control external timing circuit (see fig.8). diagnostic output (pin 16) d ynamic d istortion d etector (ddd) at the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 16 goes low. this information can be used to drive a sound processor or dc volume control to attenuate the input signal and thus limit the distortion. the output level of pin 16 is independent of the number of channels that are clipping (see figs 3 and 4). s hort - circuit protection when a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. during this short-circuit condition, pin 16 is continuously low. when a short-circuit across the load of one or more channels occurs the output stages are switched off for approximately 20 ms. after that time it is checked during approximately 50 m s to see whether the short-circuit is still present. due to this duty cycle of 50 m s/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 ma). during this short-circuit condition, pin 16 is low for 20 ms and high for 50 m s (see fig.5). the power dissipation in any short-circuit condition is very low. fig.3 distortion detector waveform; btl channel. handbook, halfpage v 0 v p v o 0 t mga705 16 fig.4 distortion detector waveform; se channels. handbook, halfpage 0 v p v o t 0 mga706 v 16 free datasheet http:///
1999 dec 14 6 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J t emperature detection when the virtual junction temperature t vj reaches 150 c, pin 16 will be active low. o pen - collector output pin 16 is an open-collector output, which allows pin 16 of more devices being tied together. limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics in accordance with iec 747-1. symbol parameter conditions min. max. unit v p supply voltage operating - 18 v no signal - 20 v i osm non-repetitive peak output current - 6a i orm repetitive peak output current - 4a v sc ac and dc short-circuit safe voltage - 18 v v rp reverse polarity voltage - 6v p tot total power dissipation - 60 w t stg storage temperature - 55 +150 c t amb operating ambient temperature - 40 +85 c t vj virtual junction temperature - 150 c symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 40 k/w r th(j-c) thermal resistance from junction to case (see fig.6) 1.3 k/w fig.5 short-circuit waveform. handbook, full pagewidth mgl214 short-circuit over the load 20 ms 50 m s t t v p current in output stage v 16 free datasheet http:///
1999 dec 14 7 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J fig.6 equivalent thermal resistance network. handbook, halfpage 3.0 k/w 0.7 k/w 3.0 k/w virtual junction output 1 output 2 case 3.0 k/w 0.7 k/w 3.0 k/w output 3 output 4 mea860 - 2 0.2 k/w free datasheet http:///
1999 dec 14 8 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J dc characteristics v p =15v; t amb =25 c; measured in fig.7; unless otherwise speci?ed. notes 1. the circuit is dc adjusted at v p = 6 to 18 v and ac operating at v p = 8.5 to 18 v. 2. only for btl channel (v 12-10 ). symbol parameter conditions min. typ. max. unit supply v p supply voltage note 1 6 15 18 v i q(tot) total quiescent current - 80 160 ma v o dc output voltage - 6.9 - v ?d v oo ? dc output offset voltage note 2 -- 150 mv mode select switch v sw(on) switch-on voltage level 8.5 -- v m ute condition v mute mute voltage 3.3 - 6.4 v v o output voltage in mute position v i(max) =1v; f=1khz -- 2mv ?d v oo ? dc output offset voltage note 2 -- 150 mv s tandby condition v stb standby voltage 0 - 2v i stb standby current -- 100 m a i sw(on) switch-on current - 12 40 m a diagnostic output (pin 16) v diag diagnostic output voltage any short-circuit or clipping -- 0.6 v free datasheet http:///
1999 dec 14 9 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J ac characteristics v p = 15 v; f = 1 khz; t amb =25 c; measure in fig.7; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit btl channel p o output power note 1 thd = 0.5% 16 20 - w thd = 10% 22 26 - w thd total harmonic distortion p o =1w - 0.06 - % b power bandwidth thd = 0.5%; - 20 to - hz p o = - 1 db; with respect to 16 w 15000 f ro(l) low frequency roll-off at - 1 db; note 2 - 25 - hz f ro(h) high frequency roll-off at - 1db 20 -- khz g v closed loop voltage gain 25 26 27 db svrr supply voltage ripple rejection note 3 on 48 -- db mute 46 -- db standby 80 -- db ? z i ? input impedance 25 30 38 k w v n(o) noise output voltage on; r s =0 w ; note 4 - 70 -m v on; r s =10k w ; note 4 - 100 200 m v mute; notes 4 and 5 - 60 -m v a cs channel separation r s =10k w 40 60 - db d ynamic distortion detector thd total harmonic distortion v 16 0.6 v; no short-circuit - 10 - % free datasheet http:///
1999 dec 14 10 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J notes 1. output power is measured directly at the output pins of the ic. 2. frequency response externally fixed. 3. ripple rejection measured at the output with a source impedance of 0 w , maximum ripple amplitude of 2 v (p-p) and at a frequency of between 100 hz and 10 khz. 4. noise measured in a bandwidth of 20 hz to 20 khz. 5. noise output voltage independent of r s (v i = 0 v). single-ended channels p o output power note 1 thd = 0.5% 8 10 - w thd = 10% 11 13 - w r l1 =4 w ; note 1 thd = 0.5% - 5.5 - w thd = 10% - 7 - w thd total harmonic distortion p o =1w - 0.06 - % f ro(l) low frequency roll-off at - 1 db; note 2 - 25 - hz f ro(h) high frequency roll-off at - 1db 20 -- khz g v closed loop voltage gain 19 20 21 db svrr supply voltage ripple rejection note 3 on 48 -- db mute 46 -- db standby 80 -- db ? z i ? input impedance 50 60 75 k w v n(o) noise output voltage on; r s =0 w ; note 4 - 50 -m v on; r s =10k w ; note 4 - 70 100 m v mute; notes 4 and 5 - 50 -m v a cs channel separation r s =10k w 40 60 - db ?d g v ? channel unbalance -- 1db d ynamic distortion detector thd total harmonic distortion v 16 0.6 v; no short-circuit - 10 - % symbol parameter conditions min. typ. max. unit free datasheet http:///
1999 dec 14 11 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J test and application information fig.7 application diagram. handbook, full pagewidth mgl429 100 nf 16 5 13 220 nf 1 6 8 711 v p tda8510J 2 ground (signal) 14 9 not connected 3 input 2 reference voltage 470 nf 100 m f 2200 m f 1000 m f 1000 m f 15 10 60 k w 60 k w 60 k w r l1 2 w r l2 4 w r l1 2 w 60 k w 10 k w inputs 3 and 4 4 17 12 + - + + - - + - power ground (substrate) input 1 supply voltage ripple rejection 1/2v p 220 nf mode switch free datasheet http:///
1999 dec 14 12 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J mode select switch to avoid switch-on plops, it is advised to keep the amplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17. the circuit in fig.8 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off. fig.8 mode select switch circuitry. handbook, halfpage 100 k w mga708 47 m f 10 k w 100 w mode select switch v p free datasheet http:///
1999 dec 14 13 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J package outline references outline version european projection issue date iec jedec eiaj dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot243-1 0 5 10 mm scale d l e a c a 2 l 3 q w m b p 1 d d z e e x h 117 j e h non-concave 95-03-11 97-12-16 dbs17p: plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1 view b : mounting base side m 2 e v m b unit a e 1 a 2 b p cd (1) e (1) z (1) de d h ll 3 m mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 v 0.8 12.2 11.8 1.27 e 2 5.08 2.4 1.6 e h 6 2.00 1.45 2.1 1.8 3.4 3.1 4.3 12.4 11.0 q j 0.4 w 0.03 x free datasheet http:///
1999 dec 14 14 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J soldering introduction to soldering through-hole mount packages this text gives a brief insight to wave, dip and manual soldering. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). wave soldering is the preferred method for mounting of through-hole mount ic packages on a printed-circuit board. soldering by dipping or by solder wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joints for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. manual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. suitability of through-hole mount ic packages for dipping and wave soldering methods note 1. for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method dipping wave dbs, dip, hdip, sdip, sil suitable suitable (1) data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. free datasheet http:///
1999 dec 14 15 philips semiconductors preliminary speci?cation 26 w btl and 2 13 w se power ampli?ers tda8510J notes free datasheet http:///
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 68 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 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